All-Silicon Raman Laser with Quasi-Phase-Matched Structures ...- an all silicon raman laser ,Si Raman laser with resonators can produce about 174 times larger laser power at 1.3µm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5µm)2. Keywords„All-silicon raman laser, FTTH, GE-PON, Raman laser - WikipediaSilicon Raman lasers. More recently, Raman lasing has been demonstrated in silicon-based integrated-optical waveguides by Bahram Jalali' group at the University of California in Los Angeles in 2004 (pulsed operation) and by Intel in 2005 (continuous-wave), respectively.
Silicon dominates the microelectronics industry but it is not used in photonic applications because it does not emit light efficiently. Last year, however, researchers at the University of California at Los Angeles discovered a way to exploit the Raman effect and achieve laser action in silicon, although their device needed an eight metre long optical fibre to work.
All-silicon raman amplifiers and laser based on micro ring resonators . Aug 2, 2011 - The Trustees Of Columbia University In The City Of New York ...
The silicon Raman laser described here is based on a low-loss single-mode rib waveguide containing a reverse-biased p-i-n diode structure. The silicon rib waveguide is fabricated on the (100)...
The experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips. The possibility of light generation and/or amplification in silicon has ...
The breakthrough silicon laser used a PIN device and the Raman effect to amplify light as it bounced between two mirrors coated on the waveguide ends, producing a continuous laser beam at a new wavelength. Figure 5. An example of creating multiple silicon laser sources from one pump beam. A pump beam that contains multiple wave lengths
We carefully layed the silicon wafers onto the sample holder. We didn’t rotate the samples. A few exposures were made to find the correct settings, and the optimum height for the laser and position on the sample for the laser focus point. For both samples, the settings that worked were 10 second exposure times at about half the peak laser ...
With the Raman amplifier between the two dielectric mirrors, we had the basic configuration needed for a laser. After all, laser stands for "light amplification by stimulated emission of radiation ...
View 2_An all-silicon Raman laser.pdf from PHY 314 at Arizona State University. letters to nature . An all-silicon Raman laser Haisheng Rong1, Ansheng Liu1, Richard Jones1, Oded Cohen2, Dani
The Continuous Wave Silicon Raman Laser The continuous wave silicon Raman laser is a device that utilizes SRS as a gain mechanism rather than stimulated emission of atoms to achieve gain and lasing conditions. The device was first demonstrated in 2004-2005 [4,5] and has subsequently received substantial research
In this paper, we report the demonstration of a Raman laser in silicon. The laser consists of a silicon gain medium incorporated in a fiber loop cavity. It is pumped with 30 ps wide pump pulses at a 25 MHz repetition rate and is centered at 1540 nm. The laser produces output pulses at the Stokes wavelength of 1675 nm.
Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip.
02 January 2005. By Neil Savage. In the next-generation silicon Raman laser Jalali is developing, pump light travels along an optical waveguide to a micro-disk resonator, circulates around the disk interacting with the atomic vibrations of the silicon, and continues along the waveguide at a new wavelength. Silicon lasers working in the mid-IR ...
The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs ...
A continuous-wave Raman silicon laser with a photonic-crystal nanocavity less than ten micrometres in size and an unprecedentedly low lasing threshold of one microwatt is demonstrated, showing ...
Methods of manufacturing a lasing device including a silicon micro ring coupled with a silicon waveguide are also disclosed. Devices for generating a laser beam are disclosed. The devices include a silicon micro ring having at least one silicon optical waveguide disposed at a distance from the micro ring.
FIBER LASER: August, 2009: Tunnermann et al. 20080304528: Nitride semiconductor laser device and fabrication method thereof: December, 2008: Yamamoto et al. 20170070022: SLAB LASER AND AMPLIFIER AND METHOD OF USE: March, 2017: Stuart et al. 20040071176: Semiconductor laser device and method for manufacturing the same: April, 2004: Ohta et al ...
Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip.
Silicon dominates the microelectronics industry but it is not used in photonic applications because it does not emit light efficiently. Last year, however, researchers at the University of California at Los Angeles discovered a way to exploit the Raman effect and achieve laser action in silicon, although their device needed an eight metre long optical fibre to work.
In conclusion, a LED pumped all-silicon micron-scale Raman amplifier based on SiNC∕SiO 2 embedded SPCW is proposed in this paper. The cost effective highly integrable amplifier also eradicates the temporal impairments of output pulses which is an inherent demerit of off-chip laser pumping. With a 4 μm long SPCW and 6 mW pump power, the ...
Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip.
Abstract: We report the first observation of spontaneous Raman scattering emission from a Raman silicon nanocavity laser excited by broadband light from a superluminescent diode. Published in: 2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
Now, Haisheng Rong and colleagues at Intel labs in Santa Clara, California and Jerusalem in Israel have made a compact all-silicon Raman laser on a single silicon chip. Rong and co-workers started by making an S-shaped silicon waveguide with standard photolithography and etching techniques.
The silicon Raman laser optical cavity was formed by coating one of the waveguide facets with a multi-layer coating while leaving the other facet uncoated. The facet coating was designed to be...
The silicon Raman laser described here is based on a low-loss single-mode rib waveguide containing a reverse-biased p-i-n diode structure. The silicon rib waveguide is fabricated on the (100) surface of an undoped silicon-on-insulator (SOI) substrate. Silicon waveguide patterning was done using standard projection photolithography and Cl
