Laser-induced color centers in crystals - ScienceDirect- laser writing of color centers ,Color centers are widely used in quantum information, quantum sensing, micro-nano optics and other relevant fields. In addition to the traditional ways that can generate color centers, for instance, ion beam implantation, direct laser writing (DLW) technology has recently emerged as an appealing alternative to induce color centers because it enables true three-dimensional and high precision ... (PDF) Laser writing of colour centres in diamondAbstract: Laser writing of colour centres in diamond offers a new method for the engineering of quantum materials and devices. Here we will describe our latest progress in the writing of highly...
Laser writing has been proven as a powerful approach for preparing color centers in solids. Here, recent advances of laser writing color centers in various promising solid-state quantum systems are reviewed, from bulk crystals, such as diamond, silicon carbon, to low-dimensional nanomaterials, such as single-walled carbon nanotubes, 2D layered ...
@article{osti_20723182, title = {Formation and direct writing of color centers in LiF using a laser-induced extreme ultraviolet plasma in combination with a Schwarzschild objective}, author = {Barkusky, Frank and Peth, Christian and Mann, Klaus and Feigl, Torsten and Kaiser, Norbert and Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik, Albert-Einstein-Strasse 7, D-07745 Jena ...
The direct laser-writing (DLW) technique has recently emerged as a powerful tool to create color centers in solid-state materials. It can define color centers at arbitrary depths inside the substrate and operate at the ambient environment, therefore, providing a feasible 3D fabrication method for integrated quantum photonics.
In a typical conversion of PDMS to SiC, a laser scan with a predefined pattern at 5% power (2.5 W), 1000 points per inch, and speed of 0.254 mm/s was performed. Residual PDMS film maybe removed by mechanical peel-off or chemical etching. Silver paste or solder was used to connect the copper wires with the devices.
In a typical conversion of PDMS to SiC, a laser scan with a predefined pattern at 5% power (2.5 W), 1000 points per inch, and speed of 0.254 mm/s was performed. Residual PDMS film maybe removed by mechanical peel-off or chemical etching. Silver paste or solder was used to connect the copper wires with the devices.
In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.
Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the ...
Formation and direct writing of color centers in LiF using a laser-induced extreme ultraviolet plasma in combination with a Schwarzschild objective. Full Record ...
In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.
Laser writing of colour centres in diamond offers a new method for the engineering of quantum materials and devices. Here we will describe our latest progress in the writing of highly coherent nitrogen-vacancy centres and in the deterministic writing of NV centres using laser annealing. © 2019 The Author (s) PDF Article More Like This
Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the ...
The direct laser-writing (DLW) technique has recently emerged as a powerful tool to create color centers in solid-state materials. It can define color centers at arbitrary depths inside the...
Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the ...
Laser Writing of Scalable Single Color Centers in Silicon Carbide Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems ( Awschalom et al. Nat. Photonics 2018 , 12 , 516 - 527 ; Atatüre et al. Nat. Rev. Mater. 2018 , 3 , 38 - 51 ).
3 National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan; [email protected] 4 Centre for Quantum Computation and Communication Technology, School of Physics, The University of Melbourne, Melbourne, VIC 3001, Australia; [email protected]
In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.
In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.
Abstract: We engineered the localized color centers in two-dimensional hexagonal boron nitrides (hBN) monolayers using laser writing. A 4 nm narrow linewidth, well polarized and single photon emission with 3-4 ns short lifetime was observed in the vicinity of the irradiated region.
Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the ...
Formation and direct writing of color centers in LiF using a laser-induced extreme ultraviolet plasma in combination with a Schwarzschild objective. Full Record ...
In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.
Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within ...
In this paper, we describe direct laser writing employed in 4H-SiC to create a controlled array or patterns of luminescent emission in the red and near infrared region (from 900nm to 1200nm) under green, red and infrared lasers excitations, respectively. The observed emissions are mainly attributed to vacancies related color centers in 4H-SiC.
Laser writing of color centers and optofluidics in synthetic diamond for quantum technologies Istituto di fotonica e nanotecnologie, CNR Milano Integrated photonic circuits pave the way for next generation technologies for quantum information and sensing applications. Femtosecond laser writing has emerged as a valuable
